Mascali/Picklock_RCM
1
0
Fork 0
Code Issues Pull requests Projects Releases Packages Wiki Activity

Update to hekate bdk 5.5.6

Browse source
This commit is contained in:
shchmue 2021-05-12 15:38:34 -06:00
parent 93909f149e
commit a7712b173c
95 changed files with 2720 additions and 1684 deletions
Download patch file Download diff file Expand all files Collapse all files

18
bdk/mem/mc.c
View file

@ -1,6 +1,6 @@
/*
* Copyright (c) 2018 naehrwert
* Copyright (c) 2018 CTCaer
* Copyright (c) 2018-2020 CTCaer
*
* This program is free software; you can redistribute it and/or modify it
* under the terms and conditions of the GNU General Public License,
@ -20,6 +20,8 @@
#include <soc/clock.h>
#include <utils/util.h>
#define CONFIG_ENABLE_AHB_REDIRECT
void mc_config_tsec_carveout(u32 bom, u32 size1mb, bool lock)
{
MC(MC_SEC_CARVEOUT_BOM) = bom;
@ -143,17 +145,19 @@ void mc_disable_ahb_redirect()
void mc_enable()
{
// Reset EMC source to PLLP.
CLOCK(CLK_RST_CONTROLLER_CLK_SOURCE_EMC) = (CLOCK(CLK_RST_CONTROLLER_CLK_SOURCE_EMC) & 0x1FFFFFFF) | 0x40000000;
// Enable memory clocks.
CLOCK(CLK_RST_CONTROLLER_CLK_ENB_H_SET) = (CLOCK(CLK_RST_CONTROLLER_CLK_ENB_H_SET) & ~BIT(CLK_H_EMC)) | BIT(CLK_H_EMC);
CLOCK(CLK_RST_CONTROLLER_CLK_ENB_H_SET) = (CLOCK(CLK_RST_CONTROLLER_CLK_ENB_H_SET) & ~BIT(CLK_H_MEM)) | BIT(CLK_H_MEM);
CLOCK(CLK_RST_CONTROLLER_CLK_ENB_X_SET) = (CLOCK(CLK_RST_CONTROLLER_CLK_ENB_X_SET) & ~BIT(CLK_X_EMC_DLL)) | BIT(CLK_X_EMC_DLL);
CLOCK(CLK_RST_CONTROLLER_CLK_ENB_H_SET) = BIT(CLK_H_EMC);
CLOCK(CLK_RST_CONTROLLER_CLK_ENB_H_SET) = BIT(CLK_H_MEM);
CLOCK(CLK_RST_CONTROLLER_CLK_ENB_X_SET) = BIT(CLK_X_EMC_DLL);
// Clear clock resets for memory.
CLOCK(CLK_RST_CONTROLLER_RST_DEV_H_CLR) = BIT(CLK_H_EMC) | BIT(CLK_H_MEM);
usleep(5);
//#ifdef CONFIG_ENABLE_AHB_REDIRECT
#ifdef CONFIG_ENABLE_AHB_REDIRECT
mc_enable_ahb_redirect();
#else
mc_disable_ahb_redirect();
//mc_enable_ahb_redirect();
//#endif
#endif
}

32
bdk/mem/minerva.c
View file

@ -60,7 +60,7 @@ u32 minerva_init()
mtc_config_t mtc_tmp;
mtc_tmp.mtc_table = mtc_cfg->mtc_table;
mtc_tmp.sdram_id = (fuse_read_odm(4) >> 3) & 0x1F;
mtc_tmp.sdram_id = fuse_read_dramid(false);
mtc_tmp.init_done = MTC_NEW_MAGIC;
u32 ep_addr = ianos_loader("bootloader/sys/libsys_minerva.bso", DRAM_LIB, (void *)&mtc_tmp);
@ -81,7 +81,7 @@ u32 minerva_init()
// Set table to nyx storage.
mtc_cfg->mtc_table = (emc_table_t *)nyx_str->mtc_table;
mtc_cfg->sdram_id = (fuse_read_odm(4) >> 3) & 0x1F;
mtc_cfg->sdram_id = fuse_read_dramid(false);
mtc_cfg->init_done = MTC_NEW_MAGIC; // Initialize mtc table.
u32 ep_addr = ianos_loader("bootloader/sys/libsys_minerva.bso", DRAM_LIB, (void *)mtc_cfg);
@ -104,21 +104,21 @@ u32 minerva_init()
}
mtc_cfg->rate_from = mtc_cfg->mtc_table[curr_ram_idx].rate_khz;
mtc_cfg->rate_to = 204000;
mtc_cfg->rate_to = FREQ_204;
mtc_cfg->train_mode = OP_TRAIN;
minerva_cfg(mtc_cfg, NULL);
mtc_cfg->rate_to = 800000;
mtc_cfg->rate_to = FREQ_800;
minerva_cfg(mtc_cfg, NULL);
mtc_cfg->rate_to = 1600000;
mtc_cfg->rate_to = FREQ_1600;
minerva_cfg(mtc_cfg, NULL);
// FSP WAR.
mtc_cfg->train_mode = OP_SWITCH;
mtc_cfg->rate_to = 800000;
mtc_cfg->rate_to = FREQ_800;
minerva_cfg(mtc_cfg, NULL);
// Switch to max.
mtc_cfg->rate_to = 1600000;
mtc_cfg->rate_to = FREQ_1600;
minerva_cfg(mtc_cfg, NULL);
return 0;
@ -129,6 +129,7 @@ void minerva_change_freq(minerva_freq_t freq)
if (!minerva_cfg)
return;
// Check if requested frequency is different. Do not allow otherwise because it will hang.
mtc_config_t *mtc_cfg = (mtc_config_t *)&nyx_str->mtc_cfg;
if (mtc_cfg->rate_from != freq)
{
@ -138,6 +139,23 @@ void minerva_change_freq(minerva_freq_t freq)
}
}
void minerva_prep_boot_freq()
{
if (!minerva_cfg)
return;
mtc_config_t *mtc_cfg = (mtc_config_t *)&nyx_str->mtc_cfg;
// Check if there's RAM OC. If not exit.
if (mtc_cfg->mtc_table[mtc_cfg->table_entries - 1].rate_khz == FREQ_1600)
return;
// FSP WAR.
minerva_change_freq(FREQ_204);
// Scale down to 800 MHz boot freq.
minerva_change_freq(FREQ_800);
}
void minerva_periodic_training()
{
if (!minerva_cfg)

1
bdk/mem/minerva.h
View file

@ -60,6 +60,7 @@ typedef enum
extern void (*minerva_cfg)(mtc_config_t *mtc_cfg, void *);
u32 minerva_init();
void minerva_change_freq(minerva_freq_t freq);
void minerva_prep_boot_freq();
void minerva_periodic_training();
#endif

27
bdk/mem/sdram.c
View file

@ -54,11 +54,6 @@ typedef struct _sdram_vendor_patch_t
#include "sdram_config_t210b01.inl"
static u32 _sdram_get_id()
{
return ((fuse_read_odm(4) & 0xF8) >> 3);
}
static bool _sdram_wait_emc_status(u32 reg_offset, u32 bit_mask, bool updated_state, s32 emc_channel)
{
bool err = true;
@ -1374,9 +1369,7 @@ static void _sdram_patch_model_params_t210b01(u32 dramid, u32 *params)
static void *_sdram_get_params_t210()
{
// Check if id is proper.
u32 dramid = _sdram_get_id();
if (dramid > 6)
dramid = 0;
u32 dramid = fuse_read_dramid(false);
#ifdef CONFIG_SDRAM_COMPRESS_CFG
@ -1413,9 +1406,7 @@ static void *_sdram_get_params_t210()
void *sdram_get_params_t210b01()
{
// Check if id is proper.
u32 dramid = _sdram_get_id();
if (dramid > 27)
dramid = 8;
u32 dramid = fuse_read_dramid(false);
u32 *buf = (u32 *)SDRAM_PARAMS_ADDR;
memcpy(buf, &_dram_cfg_08_10_12_14_samsung_hynix_4gb, sizeof(sdram_params_t210b01_t));
@ -1439,12 +1430,12 @@ void *sdram_get_params_t210b01()
case LPDDR4X_HOAG_4GB_SAMSUNG_1Y_X:
case LPDDR4X_IOWA_4GB_SAMSUNG_1Y_Y:
case LPDDR4X_IOWA_8GB_SAMSUNG_1Y_Y:
case LPDDR4X_SDS_4GB_SAMSUNG_1Y_A:
case LPDDR4X_SDS_8GB_SAMSUNG_1Y_X:
case LPDDR4X_SDS_4GB_SAMSUNG_1Y_X:
case LPDDR4X_AULA_4GB_SAMSUNG_1Y_A:
case LPDDR4X_AULA_8GB_SAMSUNG_1Y_X:
case LPDDR4X_AULA_4GB_SAMSUNG_1Y_X:
case LPDDR4X_IOWA_4GB_MICRON_1Y_A:
case LPDDR4X_HOAG_4GB_MICRON_1Y_A:
case LPDDR4X_SDS_4GB_MICRON_1Y_A:
case LPDDR4X_AULA_4GB_MICRON_1Y_A:
_sdram_patch_model_params_t210b01(dramid, (u32 *)buf);
break;
}
@ -1494,7 +1485,7 @@ static void _sdram_init_t210()
const sdram_params_t210_t *params = (const sdram_params_t210_t *)_sdram_get_params_t210();
// Set DRAM voltage.
max77620_regulator_set_voltage(REGULATOR_SD1, 1100000);
max7762x_regulator_set_voltage(REGULATOR_SD1, 1100000);
// VDDP Select.
PMC(APBDEV_PMC_VDDP_SEL) = params->pmc_vddp_sel;
@ -1539,8 +1530,8 @@ static void _sdram_init_t210b01()
void sdram_init()
{
// Configure SD regulator for DRAM.
i2c_send_byte(I2C_5, MAX77620_I2C_ADDR, MAX77620_REG_SD_CFG2, 0x05);
// Disable remote sense for SD1.
i2c_send_byte(I2C_5, MAX77620_I2C_ADDR, MAX77620_REG_SD_CFG2, MAX77620_SD_CNF2_ROVS_EN_SD0 | MAX77620_SD_CNF2_RSVD);
if (hw_get_chip_id() == GP_HIDREV_MAJOR_T210)
_sdram_init_t210();

10
bdk/mem/sdram.h
View file

@ -45,7 +45,7 @@ enum sdram_ids_erista
LPDDR4_ICOSA_4GB_SAMSUNG_K4F6E304HB_MGCH = 0,
LPDDR4_ICOSA_4GB_HYNIX_H9HCNNNBPUMLHR_NLE = 1,
LPDDR4_ICOSA_4GB_MICRON_MT53B512M32D2NP_062_WT = 2,
LPDDR4_COPPER_4GB_SAMSUNG_K4F6E304HB_MGCH = 3,
LPDDR4_COPPER_4GB_SAMSUNG_K4F6E304HB_MGCH = 3, // Changed to AULA Hynix 4GB 1Y-A.
LPDDR4_ICOSA_6GB_SAMSUNG_K4FHE3D4HM_MGCH = 4,
LPDDR4_COPPER_4GB_HYNIX_H9HCNNNBPUMLHR_NLE = 5,
LPDDR4_COPPER_4GB_MICRON_MT53B512M32D2NP_062_WT = 6,
@ -76,14 +76,14 @@ enum sdram_ids_mariko
LPDDR4X_IOWA_4GB_SAMSUNG_1Y_Y = 20,
LPDDR4X_IOWA_8GB_SAMSUNG_1Y_Y = 21,
LPDDR4X_SDS_4GB_SAMSUNG_1Y_A = 22,
LPDDR4X_AULA_4GB_SAMSUNG_1Y_A = 22,
LPDDR4X_SDS_8GB_SAMSUNG_1Y_X = 23,
LPDDR4X_SDS_4GB_SAMSUNG_1Y_X = 24,
LPDDR4X_AULA_8GB_SAMSUNG_1Y_X = 23,
LPDDR4X_AULA_4GB_SAMSUNG_1Y_X = 24,
LPDDR4X_IOWA_4GB_MICRON_1Y_A = 25,
LPDDR4X_HOAG_4GB_MICRON_1Y_A = 26,
LPDDR4X_SDS_4GB_MICRON_1Y_A = 27
LPDDR4X_AULA_4GB_MICRON_1Y_A = 27
};
void sdram_init();

18
bdk/mem/sdram_config.inl
View file

@ -97,7 +97,7 @@ static const sdram_params_t210_t _dram_cfg_0_samsung_4gb = {
* DRAM size information
* Specifies the value for EMC_ADR_CFG
*/
.emc_adr_cfg = 0x00000001, // 2 populated DRAM Devices.
.emc_adr_cfg = 0x00000001, // 2 Ranks.
/*
* Specifies the time to wait after asserting pin
@ -243,7 +243,7 @@ static const sdram_params_t210_t _dram_cfg_0_samsung_4gb = {
.emc_cfg_dig_dll = 0x002C00A0,
.emc_cfg_dig_dll_1 = 0x00003701,
.emc_cfg_dig_dll_period = 0x00008000,
.emc_dev_select = 0x00000000, // Both devices.
.emc_dev_select = 0x00000000, // Both Ranks.
.emc_sel_dpd_ctrl = 0x00040008,
/* Pads trimmer delays */
@ -406,7 +406,7 @@ static const sdram_params_t210_t _dram_cfg_0_samsung_4gb = {
.pmc_ddr_ctrl = 0x0007FF8B,
.emc_acpd_control = 0x00000000,
.emc_swizzle_rank0_byte0 = 0x76543201,
.emc_swizzle_rank0_byte0 = 0x76543201, // Overridden to 0x76543201 by spare6/7.
.emc_swizzle_rank0_byte1 = 0x65324710,
.emc_swizzle_rank0_byte2 = 0x25763410,
.emc_swizzle_rank0_byte3 = 0x25673401,
@ -454,7 +454,7 @@ static const sdram_params_t210_t _dram_cfg_0_samsung_4gb = {
.emc_pmacro_data_rx_term_mode = 0x00000010,
.emc_pmacro_cmd_rx_term_mode = 0x00003000,
.emc_pmacro_data_pad_tx_ctrl = 0x02000111,
.emc_pmacro_common_pad_tx_ctrl = 0x00000008,
.emc_pmacro_common_pad_tx_ctrl = 0x00000008, // Overridden to 0x0000000A by spare4/5.
.emc_pmacro_cmd_pad_tx_ctrl = 0x0A000000,
.emc_cfg3 = 0x00000040,
@ -490,9 +490,9 @@ static const sdram_params_t210_t _dram_cfg_0_samsung_4gb = {
.emc_pmacro_cmd_ctrl2 = 0x0A0A0A0A,
/* DRAM size information */
.mc_emem_adr_cfg = 0x00000001, // 2 populated DRAM Devices.
.mc_emem_adr_cfg_dev0 = 0x00070302, // Density 512MB.
.mc_emem_adr_cfg_dev1 = 0x00070302, // Density 512MB.
.mc_emem_adr_cfg = 0x00000001, // 2 Ranks.
.mc_emem_adr_cfg_dev0 = 0x00070302, // Rank 0 Density 512MB.
.mc_emem_adr_cfg_dev1 = 0x00070302, // Rank 1 Density 512MB.
.mc_emem_adr_cfg_channel_mask = 0xFFFF2400,
.mc_emem_adr_cfg_bank_mask0 = 0x6E574400,
.mc_emem_adr_cfg_bank_mask1 = 0x39722800,
@ -653,8 +653,8 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210[] = {
{ 0x00000005, 368, DRAM_ID(1) | DRAM_ID(5) }, // mc_emem_arb_timing_r2w.
// Samsung 6GB density config.
{ 0x000C0302, 347, DRAM_ID(4) }, // mc_emem_adr_cfg_dev0. 768MB sub-partition density.
{ 0x000C0302, 348, DRAM_ID(4) }, // mc_emem_adr_cfg_dev1. 768MB sub-partition density.
{ 0x000C0302, 347, DRAM_ID(4) }, // mc_emem_adr_cfg_dev0. 768MB Rank 0 density.
{ 0x000C0302, 348, DRAM_ID(4) }, // mc_emem_adr_cfg_dev1. 768MB Rank 1 density.
{ 0x00001800, 353, DRAM_ID(4) }, // mc_emem_cfg. 6GB total density.
#ifdef CONFIG_SDRAM_COPPER_SUPPORT

30
bdk/mem/sdram_config_t210b01.inl
View file

@ -122,7 +122,7 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
* DRAM size information
* Specifies the value for EMC_ADR_CFG
*/
.emc_adr_cfg = 0x00000000, // 1 populated DRAM Device.
.emc_adr_cfg = 0x00000000, // 1 Rank.
/*
* Specifies the time to wait after asserting pin
@ -273,7 +273,7 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
.emc_cfg_dig_dll = 0x002C00A0,
.emc_cfg_dig_dll_1 = 0x000F3701,
.emc_cfg_dig_dll_period = 0x00008000,
.emc_dev_select = 0x00000002, // Dev0 only.
.emc_dev_select = 0x00000002, // Rank 0 only.
.emc_sel_dpd_ctrl = 0x0004000C,
/* Pads trimmer delays */
@ -543,9 +543,9 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
.emc_pmacro_cmd_ctrl2 = 0x00000000,
/* DRAM size information */
.mc_emem_adr_cfg = 0x00000000, // 1 populated DRAM Device.
.mc_emem_adr_cfg_dev0 = 0x00080302, // Density 1024MB.
.mc_emem_adr_cfg_dev1 = 0x00080302, // Density 1024MB.
.mc_emem_adr_cfg = 0x00000000, // 1 Rank.
.mc_emem_adr_cfg_dev0 = 0x00080302, // Rank 0 Density 1024MB.
.mc_emem_adr_cfg_dev1 = 0x00080302, // Rank 1 Density 1024MB.
.mc_emem_adr_cfg_channel_mask = 0xFFFF2400,
.mc_emem_adr_cfg_bank_mask0 = 0x6E574400,
.mc_emem_adr_cfg_bank_mask1 = 0x39722800,
@ -733,7 +733,7 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210b01[] = {
// Samsung LPDDR4X 8GB K4UBE3D4AM-MGCJ for SDEV Iowa and Hoag.
{ 0x05500000, 0x0D4 / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // emc_auto_cal_config2.
{ 0xC9AFBCBC, 0x0F4 / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // emc_auto_cal_vref_sel0.
{ 0x00000001, 0x134 / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // emc_adr_cfg. 2 populated DRAM Devices.
{ 0x00000001, 0x134 / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // emc_adr_cfg. 2 Ranks.
{ 0x00000006, 0x1CC / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // emc_quse.
{ 0x00000005, 0x1D0 / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // emc_quse_width.
{ 0x00000003, 0x1DC / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // emc_einput.
@ -764,7 +764,7 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210b01[] = {
{ 0x40000001, 0x45C / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // emc_zcal_init_dev1.
{ 0x00000000, 0x594 / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // emc_pmacro_tx_pwrd4.
{ 0x00001000, 0x598 / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // emc_pmacro_tx_pwrd5.
{ 0x00000001, 0x630 / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // mc_emem_adr_cfg. 2 populated DRAM Devices.
{ 0x00000001, 0x630 / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // mc_emem_adr_cfg. 2 Ranks.
{ 0x00002000, 0x64C / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // mc_emem_cfg. 8GB total density.
{ 0x00000002, 0x680 / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // mc_emem_arb_timing_r2r.
{ 0x02020001, 0x694 / 4, DRAM_ID2(9) | DRAM_ID2(13) }, // mc_emem_arb_da_turns.
@ -810,7 +810,7 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210b01[] = {
{ 0x2A800000, 0x6DC / 4, DRAM_ID2(16) }, // mc_video_protect_gpu_override0.
{ 0x00000002, 0x6E0 / 4, DRAM_ID2(16) }, // mc_video_protect_gpu_override1.
// Samsung LPDDR4X 4GB 10nm-class (1y) Die-X for Iowa, Hoag and SDS.
// Samsung LPDDR4X 4GB 10nm-class (1y) Die-X for Iowa, Hoag and Aula.
{ 0x05500000, 0x0D4 / 4, DRAM_ID2(17) | DRAM_ID2(19) | DRAM_ID2(24) }, // emc_auto_cal_config2.
{ 0xC9AFBCBC, 0x0F4 / 4, DRAM_ID2(17) | DRAM_ID2(19) | DRAM_ID2(24) }, // emc_auto_cal_vref_sel0.
{ 0x00000006, 0x1CC / 4, DRAM_ID2(17) | DRAM_ID2(19) | DRAM_ID2(24) }, // emc_quse.
@ -822,10 +822,10 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210b01[] = {
{ 0x2A800000, 0x6DC / 4, DRAM_ID2(17) | DRAM_ID2(19) | DRAM_ID2(24) }, // mc_video_protect_gpu_override0.
{ 0x00000002, 0x6E0 / 4, DRAM_ID2(17) | DRAM_ID2(19) | DRAM_ID2(24) }, // mc_video_protect_gpu_override1.
// Samsung LPDDR4X 8GB 10nm-class (1y) Die-X for SDEV Iowa and SDS.
// Samsung LPDDR4X 8GB 10nm-class (1y) Die-X for SDEV Iowa and Aula.
{ 0x05500000, 0x0D4 / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // emc_auto_cal_config2.
{ 0xC9AFBCBC, 0x0F4 / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // emc_auto_cal_vref_sel0.
{ 0x00000001, 0x134 / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // emc_adr_cfg. 2 populated DRAM Devices.
{ 0x00000001, 0x134 / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // emc_adr_cfg. 2 Ranks.
{ 0x00000006, 0x1CC / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // emc_quse.
{ 0x00000005, 0x1D0 / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // emc_quse_width.
{ 0x00000003, 0x1DC / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // emc_einput.
@ -847,7 +847,7 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210b01[] = {
{ 0x40000001, 0x45C / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // emc_zcal_init_dev1.
{ 0x00000000, 0x594 / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // emc_pmacro_tx_pwrd4.
{ 0x00001000, 0x598 / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // emc_pmacro_tx_pwrd5.
{ 0x00000001, 0x630 / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // mc_emem_adr_cfg. 2 populated DRAM Devices.
{ 0x00000001, 0x630 / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // mc_emem_adr_cfg. 2 Ranks.
{ 0x00002000, 0x64C / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // mc_emem_cfg. 8GB total density.
{ 0x00000001, 0x670 / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // mc_emem_arb_timing_faw.
{ 0x00000002, 0x680 / 4, DRAM_ID2(18) | DRAM_ID2(23) }, // mc_emem_arb_timing_r2r.
@ -881,7 +881,7 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210b01[] = {
// Samsung LPDDR4X 8GB 10nm-class (1y) Die-Y for SDEV Iowa.
{ 0x05500000, 0x0D4 / 4, DRAM_ID2(21) }, // emc_auto_cal_config2.
{ 0xC9AFBCBC, 0x0F4 / 4, DRAM_ID2(21) }, // emc_auto_cal_vref_sel0.
{ 0x00000001, 0x134 / 4, DRAM_ID2(21) }, // emc_adr_cfg. 2 populated DRAM Devices.
{ 0x00000001, 0x134 / 4, DRAM_ID2(21) }, // emc_adr_cfg. 2 Ranks.
{ 0x00000008, 0x24C / 4, DRAM_ID2(21) }, // emc_tfaw.
{ 0x08010004, 0x2B8 / 4, DRAM_ID2(21) }, // emc_mrw1.
{ 0x08020000, 0x2BC / 4, DRAM_ID2(21) }, // emc_mrw2.
@ -914,7 +914,7 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210b01[] = {
{ 0x40000001, 0x45C / 4, DRAM_ID2(21) }, // emc_zcal_init_dev1.
{ 0x00000000, 0x594 / 4, DRAM_ID2(21) }, // emc_pmacro_tx_pwrd4.
{ 0x00001000, 0x598 / 4, DRAM_ID2(21) }, // emc_pmacro_tx_pwrd5.
{ 0x00000001, 0x630 / 4, DRAM_ID2(21) }, // mc_emem_adr_cfg. 2 populated DRAM Devices.
{ 0x00000001, 0x630 / 4, DRAM_ID2(21) }, // mc_emem_adr_cfg. 2 Ranks.
{ 0x00002000, 0x64C / 4, DRAM_ID2(21) }, // mc_emem_cfg. 8GB total density.
{ 0x00000001, 0x670 / 4, DRAM_ID2(21) }, // mc_emem_arb_timing_faw.
{ 0x00000002, 0x680 / 4, DRAM_ID2(21) }, // mc_emem_arb_timing_r2r.
@ -922,7 +922,7 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210b01[] = {
{ 0x2A800000, 0x6DC / 4, DRAM_ID2(21) }, // mc_video_protect_gpu_override0.
{ 0x00000002, 0x6E0 / 4, DRAM_ID2(21) }, // mc_video_protect_gpu_override1.
// Samsung LPDDR4X 4GB 10nm-class (1y) Die-A for Unknown SDS.
// Samsung LPDDR4X 4GB 10nm-class (1y) Die-A for Unknown Aula.
{ 0x05500000, 0x0D4 / 4, DRAM_ID2(22) }, // emc_auto_cal_config2.
{ 0xC9AFBCBC, 0x0F4 / 4, DRAM_ID2(22) }, // emc_auto_cal_vref_sel0.
{ 0x00000008, 0x24C / 4, DRAM_ID2(22) }, // emc_tfaw.
@ -986,7 +986,7 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210b01[] = {
{ 0x00000002, 0x6E0 / 4, DRAM_ID2(22) }, // mc_video_protect_gpu_override1.
{ 0x0000009C, 0x814 / 4, DRAM_ID2(22) }, // swizzle_rank_byte_encode.
// Micron LPDDR4X 4GB 10nm-class (1y) Die-A for Unknown Iowa/Hoag/SDS.
// Micron LPDDR4X 4GB 10nm-class (1y) Die-A for Unknown Iowa/Hoag/Aula.
{ 0x05500000, 0x0D4 / 4, DRAM_ID2(25) | DRAM_ID2(26) | DRAM_ID2(27) }, // emc_auto_cal_config2.
{ 0xC9AFBCBC, 0x0F4 / 4, DRAM_ID2(25) | DRAM_ID2(26) | DRAM_ID2(27) }, // emc_auto_cal_vref_sel0.
{ 0x00000006, 0x1CC / 4, DRAM_ID2(25) | DRAM_ID2(26) | DRAM_ID2(27) }, // emc_quse.